PART |
Description |
Maker |
MGF1302 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGF1403B1 MGF1403B |
LOW NOISE GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SPF-3043 |
Low Noise pHEMT GaAs FET
|
SIRENZA[SIRENZA MICRODEVICES]
|
SPF-2086TK |
Low Noise pHEMT GaAs FET 0.1 - 6 GHz Operation
|
List of Unclassifed Manufacturers ETC SIRENZA[SIRENZA MICRODEVICES]
|
NE3509M14 |
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
NE3517S03-T1C NE3517S03-T1D |
K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
|
Renesas Electronics Corporation
|
NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105 Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管(低噪声高增益对于前端放大器离子注入平面结构全部镀金) GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
PB-CFK0301-P1-000 PB-CFK0301-P3-000 |
High Dynamic Range Dual, Low Noise GaAs FET 双高动态范围,低噪声砷化镓场效应管
|
Mimix Broadband, Inc.
|
CFK0301-AK-0000 CFK0301-AK-000T |
900 MHz, high dynamic range dual, low-noise GaAs FET
|
CELERITEK
|
NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管(低噪沟道结型场效应管 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|